| Part Number | 2SK756 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
ONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate Vol...
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| Datasheet |
 2SK756 Datasheet
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