| Part Number | 2SK2003-01M |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
600
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.5
3.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2A
2.0
2.4
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 ...
|
| Datasheet |
 2SK2003-01M Datasheet
|
