| Part Number | 2SD649 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ... |
| Features |
ter Saturation Voltage
IC= 3A; IB= 1A
B
7.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
1.5
V
VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0
100
μA
hFE
DC Current Gain
IC= 3A; VCE= 10V
tf
Fall Time
...
|
| Datasheet |
 2SD649 Datasheet
|
