logo

2SD5703

Inchange Semiconductor
Part Number 2SD5703
Manufacturer Inchange Semiconductor
Title Power Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance ...
Features 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE ...

Datasheet PDF File 2SD5703 Datasheet

2SD5703   2SD5703   2SD5703  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map