| Part Number | 2SD1932 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Minimum Lot-to-Lot variatio... |
| Features |
Breakdown Voltage IC= 10mA; IB= 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
100 μA
IEBO
Emitte...
|
| Datasheet |
 2SD1932 Datasheet 210.19KB |
