| Part Number | 2SD1918 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimu... |
| Features |
ONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0....
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| Datasheet |
 2SD1918 Datasheet 189.98KB |
