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2SD1918

Inchange Semiconductor
Part Number 2SD1918
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High fT:fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimu...
Features ONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0....

Datasheet PDF File 2SD1918 Datasheet 189.98KB

2SD1918   2SD1918   2SD1918  




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