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2SD1912

Inchange Semiconductor
Part Number 2SD1912
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot vari...
Features n Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; ...

Datasheet PDF File 2SD1912 Datasheet 217.05KB

2SD1912   2SD1912   2SD1912  




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