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2SD1896

Inchange Semiconductor
Part Number 2SD1896
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Collector Power Dissipation ·Good Linearity of hFE ·Minimum Lot-to-Lot vari...
Features age IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A...

Datasheet PDF File 2SD1896 Datasheet 209.55KB

2SD1896   2SD1896   2SD1896  




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