| Part Number | 2SD1896 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Collector Power Dissipation ·Good Linearity of hFE ·Minimum Lot-to-Lot vari... |
| Features |
age IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A...
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| Datasheet |
 2SD1896 Datasheet 209.55KB |
