| Part Number | 2SD1857 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236 ·M... |
| Features |
ge IC= 1A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A ; VCE= 5V
fT
Current-Gain—Bandwidth Prod...
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| Datasheet |
 2SD1857 Datasheet 206.11KB |
