| Part Number | 2SD1761 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Minimum Lot-to-Lot variation... |
| Features |
0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICBO...
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| Datasheet |
 2SD1761 Datasheet
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