| Part Number | 2SD1525 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations for ... |
| Features |
or-Emitter Saturation Voltage IC= 20A, IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A, IB= 0.2A
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff current
VEB= 5V, IC= 0
hFE-1
DC Current Gain
IC= 20A; VCE= 5V
hF...
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| Datasheet |
 2SD1525 Datasheet
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