Part Number | 2SD1340 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Transistor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device perform... |
Features |
eakdown Voltage IC= 30mA; RBE= ∞
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
1.5
V
...
|
Datasheet | 2SD1340 Datasheet |