| Part Number | 2SD1298 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Transistor |
| Description | ·High DC Current Gain : hFE= 200(Min.)@ IC= 6A, VCE= 2V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·Low Collector Saturatio... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A, IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A, IB= 60mA
ICBO
Colle...
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| Datasheet |
 2SD1298 Datasheet
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