| Part Number | 2SD1195 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 2.5A ·Low Saturation Voltage ·Complement t... |
| Features |
25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 5mA
...
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| Datasheet |
 2SD1195 Datasheet 210.76KB |
