| Part Number | 2SD1162 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust d... |
| Features |
EO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
hFE-1
DC Current Gai...
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| Datasheet |
 2SD1162 Datasheet
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