| Part Number | 2SC4757 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations f... |
| Features |
less otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A...
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| Datasheet |
 2SC4757 Datasheet
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