| Part Number | 2SC3502 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V ·Complement to Type 2SA1380 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 20mA ;IB= 2mA
ICB...
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| Datasheet |
 2SC3502 Datasheet
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