| Part Number | 2SC2625 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operati... |
| Features |
ARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
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| Datasheet |
 2SC2625 Datasheet
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