| Part Number | 2SB975 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Darlington Power Transistor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type ... |
| Features |
n Power Transistor
2SB975
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A, IB= -3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A, IB= -3mA
ICB...
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| Datasheet |
 2SB975 Datasheet
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