| Part Number | 2SB966 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Ty... |
| Features |
ONDITIONS
VCE(sat)NOTE Collector-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
...
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| Datasheet |
 2SB966 Datasheet
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