logo

2SB855

Inchange Semiconductor
Part Number 2SB855
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot...
Features V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain...

Datasheet PDF File 2SB855 Datasheet

2SB855   2SB855   2SB855  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map