| Part Number | 2SB817 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complem... |
| Features |
ctor-Emitter Breakdown Voltage IC= -30mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(on) Base -...
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| Datasheet |
 2SB817 Datasheet
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