| Part Number | 2SB1216 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching ... |
| Features |
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0
V(B...
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| Datasheet |
 2SB1216 Datasheet
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