| Part Number | 2SA1166 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robus... |
| Features |
-160
V
V(BR)CBO Collector-Base Breakdown Voltage
IC=-1mA; IE=0
-160
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE=-1mA; IC=0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-2.0 V
VBE(sat) Base-Emitter Saturation Vol...
|
| Datasheet |
 2SA1166 Datasheet
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