| Part Number | 2SA1107 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robus... |
| Features |
1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-2.0 V
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
-2.0 V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V...
|
| Datasheet |
 2SA1107 Datasheet
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