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BFQ591

Inchange
Part Number BFQ591
Manufacturer Inchange
Title Silicon RF Transistor
Description ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable ...
Features A ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1m A ; IC= 0 3 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA hFE DC Current Gain IC= 70mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 70mA ; VCE= 12V;...

Datasheet PDF File BFQ591 Datasheet

BFQ591   BFQ591   BFQ591  




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