| Part Number | IXGJ50N60C4D1 |
| Manufacturer | IXYS |
| Title | High-Gain IGBT |
| Description | High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.50V ... |
| Features |
z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond
(DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA
Advantages
z Easy to Mount z Space Savings
Symbol
T...
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| Datasheet |
 IXGJ50N60C4D1 Datasheet
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