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TT2170LS

INCHANGE
Part Number TT2170LS
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Switching Speed ·High Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP...
Features r-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A IEBO Emitter Cutoff Current ICES Collector Cutoff Current hFE-1 DC Current Gain VEB= 4V; IC= 0 VCE= 800V;VBE= 0 IC= 0.5A; VCE= 5V ...

Datasheet PDF File TT2170LS Datasheet

TT2170LS   TT2170LS   TT2170LS  




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