| Part Number | STB32NM50N |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
500
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=11A
0.13
Ω
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
±100 nA
...
|
| Datasheet |
 STB32NM50N Datasheet
|
