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STB15NM60ND

INCHANGE
Part Number STB15NM60ND
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe...
Features tage VDS= VGS; ID=0.25mA 3 5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A 0.299 mΩ IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VDS=600V; VGS= 0;TC= 125℃ 1...

Datasheet PDF File STB15NM60ND Datasheet

STB15NM60ND   STB15NM60ND   STB15NM60ND  




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