| Part Number | MJE5742H |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage : VCEO= 400V(Min) · Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device... |
| Features |
on Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
ICEV
Collector Cutoff Current
VCEV=650V,Tc=25℃ Tc=100℃
IEBO
Emitter C...
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| Datasheet |
 MJE5742H Datasheet
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