| Part Number | MJE1100 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robus... |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(on) Base-Emitter On Voltage
IC= 3A ;...
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| Datasheet |
 MJE1100 Datasheet
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