| Part Number | MJ900 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage- :... |
| Features |
markrk
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0
VCE(sat)-1 Collector-Emitter Saturation V...
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| Datasheet |
 MJ900 Datasheet
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