| Part Number | MJ11032 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement ... |
| Features |
is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emit...
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| Datasheet |
 MJ11032 Datasheet
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