| Part Number | IRL8113S |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and ... |
| Features |
MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
30
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
1.4
2.3
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=21A
6
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS=...
|
| Datasheet |
 IRL8113S Datasheet
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