| Part Number | IPI60R299CP |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.299Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak cur... |
| Datasheet |
 IPI60R299CP Datasheet 282.50KB |
