Part Number | FQD13N10 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
Features |
·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V... |
Datasheet | FQD13N10 Datasheet |