| Part Number | FJD5553 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Wide Safe Operation Area ·High Voltage Capability ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p... |
| Features |
= 200mA
V(BR)CBO
Collector-Base Breakdown Voltage IC= 500uA; IB= 0
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 500uA; IC= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Curre...
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| Datasheet |
 FJD5553 Datasheet 192.18KB |
