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FJD5553

INCHANGE
Part Number FJD5553
Manufacturer INCHANGE
Title NPN Transistor
Description ·Wide Safe Operation Area ·High Voltage Capability ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p...
Features = 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 500uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 500uA; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Curre...

Datasheet PDF File FJD5553 Datasheet 192.18KB

FJD5553   FJD5553   FJD5553  




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