Part Number | BUK555-100B |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
Semiconductor
BUK555-100A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 1.0 RDS(on) Drai... |
Datasheet | BUK555-100B Datasheet |