| Part Number | BU508DR |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust devic... |
| Features |
TERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100mA; IC= 0
5
V
VCE(sat) Collector...
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| Datasheet |
 BU508DR Datasheet
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