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BDT65B

INCHANGE
Part Number BDT65B
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust...
Features sc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT65 V(BR)CEO Collector-Emitter Breakdown Voltage BDT65A ...

Datasheet PDF File BDT65B Datasheet

BDT65B   BDT65B   BDT65B  




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