| Part Number | BDT62 |
| Manufacturer | INCHANGE |
| Title | Silicon PNP Darlington Power Transistors |
| Description | ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- B... |
| Features |
TERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
MAX UNIT 1.39 ℃/W 70 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power...
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| Datasheet |
 BDT62 Datasheet
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