| Part Number | BDT31DF |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistors |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31... |
| Features |
ange
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
1
A
22
W
150
℃
-65~15 0
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
55 ℃/W
1 isc & iscsemi is...
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| Datasheet |
 BDT31DF Datasheet
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