Part Number | BD899 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation- : PC= 70W@ ... |
Features |
e,Junction to Ambient 62.5 ℃/W
isc website:www.iscsemi.com
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isc Silicon NPN Darlington Power Transistor
BD899
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(B...
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Datasheet | BD899 Datasheet |