| Part Number | BD825 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD826 ·Minimum Lot-to... |
| Features |
iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD825
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB=...
|
| Datasheet |
 BD825 Datasheet
|
