| Part Number | BD725 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min) ·Complement to type BD726 ·Minimum Lot-to-Lot v... |
| Features |
Silicon NPN Power Transistor
BD725
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
120
V
VCE(sat) Collector-Emitter Sat...
|
| Datasheet |
 BD725 Datasheet
|
