| Part Number | BD683 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 120V(Min.) ·DC Current Gain— : hFE = 750(Min)@ IC= 1.5A ·Complement to Type BD684 ·Minimum Lot-... |
| Features |
tor
INCHANGE Semiconductor
BD683
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= ...
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| Datasheet |
 BD683 Datasheet
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