| Part Number | BD681 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 100V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD682 ·Minimum Lot-to-L... |
| Features |
STICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 1.5A; VCE= 3V...
|
| Datasheet |
 BD681 Datasheet
|
