| Part Number | BD652 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to... |
| Features |
unction to Ambient
isc website：www.iscsemi.com
70 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BD652
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. ...
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| Datasheet |
 BD652 Datasheet
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