| Part Number | 3DD401 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Em...
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| Datasheet |
 3DD401 Datasheet
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